Datasheet Summary
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NCE N-Channel Super Trench III Power MOSFET
Description
The series of devices uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
Application
- DC/DC Converter
- Ideal for high-frequency switching and synchronous rectification
General Features
- VDS =150V,ID =223A (Silicon Limited) RDS(ON)=3.9mΩ , typical @ VGS=10V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance...