Datasheet Details
| Part number | NCEP048NH150T |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 800.40 KB |
| Description | N-Channel Super Trench III Power MOSFET |
| Datasheet |
 NCEP048NH150T Datasheet
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Description
The series of devices uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
Features
- VDS =150V,ID =223A (Silicon Limited) RDS(ON)=3.9mΩ , typical @ VGS=10V.
- Excellent gate charge x RDS(on) product(FOM).
- Very low on-resistance RDS(on).
- 175 °C operating temperature.
- Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! TO-247-3L Schematic Diagram Package Marking and Ordering Information Device Marking Device NCEP048NH150T NCEP048NH150T Device Package TO-247-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwis.